16 results
Characterization of p-type Doping in Silicon Nanocrystals Embedded in SiO2
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- Journal:
- Microscopy and Microanalysis / Volume 25 / Issue S2 / August 2019
- Published online by Cambridge University Press:
- 05 August 2019, pp. 2540-2541
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- August 2019
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Ion Beam Synthesis of Doped Nanocrystals of Si1-xGex Alloys Embedded in SiO2
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- Journal:
- MRS Advances / Volume 2 / Issue 18 / 2017
- Published online by Cambridge University Press:
- 16 January 2017, pp. 975-980
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- 2017
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A Model for Boron T.E.D. in Silicon: Full Couplings of Dopant with Free and Clustered Interstitials
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- Journal:
- MRS Online Proceedings Library Archive / Volume 717 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, C5.2
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- 2002
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Defects Induced by Helium Implantation: Interaction with Boron and Phosphorus
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- Journal:
- MRS Online Proceedings Library Archive / Volume 719 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, F4.3
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- 2002
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Influence of low thermal budget pre-anneals on the high temperature redistribution of low energy boron implants in silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 669 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, J8.3
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- 2001
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Dopant - Extended Defects Interactions: The Case of Aluminum
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- Journal:
- MRS Online Proceedings Library Archive / Volume 610 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, B6.4
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- 2000
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Boron Ted in Pre-Amorphised SI: Role of the A/C Interface
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- Journal:
- MRS Online Proceedings Library Archive / Volume 532 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 55
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- 1998
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On the «A Symmetrical» Behavior of Transient Enhanced Diffusion in Pre-Amorphised SI Wafers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 532 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 67
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- 1998
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Transient Enhanced Diffusion of Dopants in Preamorphised Si Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 439 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 11
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- 1996
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Transient Enhanced Diffusion of Dopants in Preamorphised Si Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 438 / 1996
- Published online by Cambridge University Press:
- 03 September 2012, 3
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- 1996
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Reliability Implications of Defects in High Temperature Annealed Si/SiO2/Si Structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 338 / 1994
- Published online by Cambridge University Press:
- 22 February 2011, 3
- Print publication:
- 1994
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Near Interface Oxide Degradation in High Temperature Annealed Si/SiO2/Si Structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 318 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 623
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- 1993
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Hydrogen Diffusion in N-Type Silicon.Comparison With P-Type Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 209 / 1990
- Published online by Cambridge University Press:
- 26 February 2011, 573
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- 1990
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Modeling of the Diffusion of Hydrogen in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 163 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 401
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- 1989
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A Self-Interstitial Related Model for the Formation of Thermal Donors in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 104 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 189
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- 1987
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Diffusion Mechanisms and Nonequilibrium Defects in SI
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- Journal:
- MRS Online Proceedings Library Archive / Volume 36 / 1984
- Published online by Cambridge University Press:
- 21 February 2011, 117
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- 1984
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